SUM70101EL-GE3

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Vishay General Semiconductor - Diodes Division

MOSFET P-CH 100V 120A TO263

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Vishay General Semiconductor - Diodes Division

MOSFET P-CH 100V 120A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SUM70101EL-GE3

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	190 nC
Input Capacitance (Ciss) (Max) @ Vds	7000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs	10.1 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Technology	Supplier Device Package	Vgs (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SUM70101EL-GE3	375 W	4.5 V 10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2.5 V	10.1 mOhm	7000 pF	MOSFET (Metal Oxide)	TO-263 (D2PAK)	20 V	P-Channel	120 A	190 nC	Surface Mount	-55 °C	175 ░C	100 V

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General part information

P-Channel 100 V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources