Beta
⌘K
MOSFET P-CH 100V 120A TO263
| Part | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Technology | Supplier Device Package | Vgs (Max) | FET Type | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 375 W | 4.5 V 10 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 2.5 V | 10.1 mOhm | 7000 pF | MOSFET (Metal Oxide) | TO-263 (D2PAK) | 20 V | P-Channel | 120 A | 190 nC | Surface Mount | -55 °C | 175 ░C | 100 V |