Technical Specifications
Parameters and characteristics for this part
| Specification | STF2N80K5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 3 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 95 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 20 W |
| Rds On (Max) @ Id, Vgs | 4.5 Ohm |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 1.32 | |
| 50 | $ 0.87 | |||
| 100 | $ 0.84 | |||
| 500 | $ 0.69 | |||
| 1000 | $ 0.63 | |||
| 2000 | $ 0.58 | |||
| 5000 | $ 0.53 | |||
| 10000 | $ 0.53 | |||
Description
General part information
STF2N80K5 Series
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Documents
Technical documentation and resources
AN2842
Application NotesTN1225
Technical Notes & ArticlesFlyers (5 of 6)
UM1575
User ManualsFlyers (5 of 6)
Flyers (5 of 6)
Flyers (5 of 6)
Flyers (5 of 6)
AN4250
Application NotesDS14533
Product SpecificationsAN4337
Application NotesTN1156
Technical Notes & ArticlesAN2344
Application NotesTN1378
Technical Notes & ArticlesTN1224
Technical Notes & ArticlesFlyers (5 of 6)
