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STGD19N40LZ - MFG_DPAK(TO252-3)

STGD19N40LZ

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STMicroelectronics

AUTOMOTIVE-GRADE 390 V INTERNALLY CLAMPED IGBT ESCIS 180 MJ

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STGD19N40LZ - MFG_DPAK(TO252-3)

STGD19N40LZ

Active
STMicroelectronics

AUTOMOTIVE-GRADE 390 V INTERNALLY CLAMPED IGBT ESCIS 180 MJ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGD19N40LZ
Current - Collector (Ic) (Max) [Max]25 A
Current - Collector Pulsed (Icm)40 A
Gate Charge17 nC
GradeAutomotive
Input TypeLogic
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
QualificationAEC-Q101
Supplier Device PackageDPAK
Td (on/off) @ 25°C650 ns, 13.5 µs
Test Condition1000 Ohm, 10 A, 300 V, 5 V
Vce(on) (Max) @ Vge, Ic1.5 V
Voltage - Collector Emitter Breakdown (Max)390 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.27
Digi-Reel® 1$ 2.27
Tape & Reel (TR) 2500$ 1.02
5000$ 0.98

Description

General part information

STGD19N40LZ Series

This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition systems.