STPSC20065DY

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STMicroelectronics

DIODE SCHOTTKY SIC 650V 20A 2-PIN(2+TAB) TO-220AC TUBE AUTOMOTIVE AEC-Q101

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STPSC20065DY

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STMicroelectronics

DIODE SCHOTTKY SIC 650V 20A 2-PIN(2+TAB) TO-220AC TUBE AUTOMOTIVE AEC-Q101

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Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 7.50
Digikey	Tube	1	$ 8.24
		10	$ 5.61
		100	$ 4.12
		500	$ 3.54

Description

General part information

STPSC20065 Series

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.

Documents

Technical documentation and resources

Specification	STPSC20065DY	STPSC20065 Series

Capacitance @ Vr, F	1250 pF	670 - 1250 pF
Current - Average Rectified (Io)	-	10 A
Current - Reverse Leakage @ Vr	150 µA	130 - 300 µA
Grade	Automotive	Automotive
Mounting Type	Through Hole	Through Hole, Surface Mount
Operating Temperature - Junction [Max]	175 ░C	175 ░C
Operating Temperature - Junction [Min]	-40 °C	-40 °C
Package / Case	TO-220-2	TO-220-2, DO-247-2 (Straight Leads), TO-247-3, D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Qualification	AEC-Q101	AEC-Q101
Reverse Recovery Time (trr)	0 ns	0 ns
Speed	No Recovery Time	No Recovery Time
Supplier Device Package	TO-220AC	TO-220AC, DO-247, TO-220AC ins, TO-247 Long Leads, D2PAK
Technology	SiC (Silicon Carbide) Schottky	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V	650 V
Voltage - Forward (Vf) (Max) @ If	1.45 V	1.45 V

Part	Package / Case	Technology	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Qualification	Mounting Type	Supplier Device Package	Current - Reverse Leakage @ Vr	Speed	Grade	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Current - Average Rectified (Io)
STMicroelectronics STPSC20065DY	TO-220-2	SiC (Silicon Carbide) Schottky	-40 °C	175 ░C	AEC-Q101	Through Hole	TO-220AC	150 µA	No Recovery Time	Automotive	1.45 V	650 V	1250 pF
STMicroelectronics STPSC20065WY	DO-247-2 (Straight Leads)	SiC (Silicon Carbide) Schottky	-40 °C	175 ░C	AEC-Q101	Through Hole	DO-247	300 µA	No Recovery Time	Automotive	1.45 V	650 V	1250 pF
STMicroelectronics STPSC20065DI		SiC (Silicon Carbide) Schottky	-40 °C	175 ░C		Through Hole	TO-220AC ins	300 µA	No Recovery Time		1.45 V	650 V	1250 pF
STMicroelectronics STPSC20065CWL	TO-247-3	SiC (Silicon Carbide) Schottky	-40 °C	175 ░C		Through Hole	TO-247 Long Leads	130 µA	No Recovery Time		1.45 V	650 V	670 pF	10 A
STMicroelectronics STPSC20065GY-TR	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB	SiC (Silicon Carbide) Schottky	-40 °C	175 ░C	AEC-Q101	Surface Mount	D2PAK	150 µA	No Recovery Time	Automotive	1.45 V	650 V	1250 pF
STMicroelectronics STPSC20065D	TO-220-2	SiC (Silicon Carbide) Schottky	-40 °C	175 ░C		Through Hole	TO-220AC	300 µA	No Recovery Time		1.45 V	650 V	1250 pF

STPSC20065DY

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STPSC20065DY

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Pricing

Description

STPSC20065 Series

Documents

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Technical Specifications

STPSC20065 Series