BUJ100,126

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WeEn Semiconductors Co., Ltd

TRANS NPN 400V 1A TO92-3

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WeEn Semiconductors Co., Ltd

TRANS NPN 400V 1A TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	BUJ100,126

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	9
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	2 W
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max)	400 V

Part	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Power - Max [Max]	Supplier Device Package	Package / Case	Transistor Type
WeEn Semiconductors Co., Ltd BUJ100LR,126	1 A	1 mA	150 °C	400 V	1.5 V	10	Through Hole	2.1 W	TO-92-3	TO-226-3 TO-92-3	NPN
WeEn Semiconductors Co., Ltd BUJ100,412	1 A	100 µA	150 °C	400 V	1 V	9	Through Hole	2 W	TO-92-3	TO-226-3 TO-92-3	NPN
WeEn Semiconductors Co., Ltd BUJ100,126	1 A	100 µA	150 °C	400 V	1 V	9	Through Hole	2 W	TO-92-3	TO-226-3 TO-92-3	NPN
WeEn Semiconductors Co., Ltd BUJ100LR,412	1 A	1 mA	150 °C	400 V	1.5 V	10	Through Hole	2.1 W	TO-92-3	TO-226-3 TO-92-3	NPN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 400 V 1 A 2 W Through Hole TO-92-3

Technical documentation and resources

No documents available