IPD12CN10NGATMA1

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Infineon Technologies

OPTIMOS™ N-CHANNEL POWER MOSFET 100 V ; DPAK TO-252 PACKAGE; 12.4 MOHM;

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IPD12CN10NGATMA1

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Infineon Technologies

OPTIMOS™ N-CHANNEL POWER MOSFET 100 V ; DPAK TO-252 PACKAGE; 12.4 MOHM;

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPD12CN10NGATMA1

Current - Continuous Drain (Id) @ 25°C	67 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	65 nC
Input Capacitance (Ciss) (Max) @ Vds	4320 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	12.4 mOhm
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPD12CN10 Series

Part	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs (Max)
Infineon Technologies IPD12CN10NGATMA1	DPAK (2 Leads + Tab) SC-63 TO-252-3	12.4 mOhm	65 nC	-55 °C	175 ░C	10 V	PG-TO252-3	4 V	4320 pF	N-Channel	100 V	MOSFET (Metal Oxide)	125 W	67 A	Surface Mount	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.34
		10	$ 1.51
		100	$ 1.03
		500	$ 0.82
		1000	$ 0.76
	Digi-Reel®	1	$ 2.34
		10	$ 1.51
		100	$ 1.03
		500	$ 0.82
		1000	$ 0.76
	Tape & Reel (TR)	2500	$ 0.69
		5000	$ 0.68
Newark	Each (Supplied on Cut Tape)	1	$ 2.05
		10	$ 1.37
		25	$ 1.24
		50	$ 1.10
		100	$ 0.97
		250	$ 0.90
		500	$ 0.82
		1000	$ 0.77

Description

General part information

IPD12CN10 Series

Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on)and FOM (figure of merit).

Documents

Technical documentation and resources