6A01B-G

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Comchip Technology

DIODE GEN PURP 100V 6A R-6

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Comchip Technology

DIODE GEN PURP 100V 6A R-6

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	6A01B-G	6A01 Series

Capacitance @ Vr, F	100 pF	100 pF
Current - Average Rectified (Io)	6 A	6 A
Current - Reverse Leakage @ Vr	10 µA	10 µA
Mounting Type	Through Hole	Through Hole
Operating Temperature - Junction [Max]	125 °C	125 °C
Operating Temperature - Junction [Min]	-55 °C	-55 °C
Package / Case	R-6, Axial	R-6, Axial
Speed	Standard Recovery >500ns	Standard Recovery >500ns
Speed	200 mA	200 mA
Supplier Device Package	R-6	R-6
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V	100 V
Voltage - Forward (Vf) (Max) @ If	1 V	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1000	$ 0.22

DIODE GEN PURP 100V 6A R-6

Part	Technology	Package / Case	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Speed	Speed	Supplier Device Package	Capacitance @ Vr, F	Current - Average Rectified (Io)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Reverse Leakage @ Vr
Comchip Technology 6A01-G	Standard	R-6, Axial	Through Hole	100 V	1 V	Standard Recovery >500ns	200 mA	R-6	100 pF	6 A	-55 °C	125 °C	10 µA
Comchip Technology 6A01B-G	Standard	R-6, Axial	Through Hole	100 V	1 V	Standard Recovery >500ns	200 mA	R-6	100 pF	6 A	-55 °C	125 °C	10 µA

General part information

Diode 100 V 6A Through Hole R-6

Technical documentation and resources

No documents available