FM25W256-G

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Infineon Technologies

FERROELECTRIC RAM (FRAM), 256 KBIT, 32K X 8BIT, SPI, 20 MHZ, 2.7 V TO 5.5 V SUPPLY, SOIC-8

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FM25W256-G

Active

Infineon Technologies

FERROELECTRIC RAM (FRAM), 256 KBIT, 32K X 8BIT, SPI, 20 MHZ, 2.7 V TO 5.5 V SUPPLY, SOIC-8

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FM25W256-G

Clock Frequency	20 MHz
Memory Format	FRAM
Memory Interface	SPI
Memory Organization	32K x 8
Memory Size	32 KB
Memory Type	Non-Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Supplier Device Package	8-SOIC
Technology	FRAM (Ferroelectric RAM)
Voltage - Supply [Max]	5.5 V
Voltage - Supply [Min]	2.7 V

FM25W256 Series

Part	Package / Case	Package / Case [y]	Package / Case [x]	Memory Type	Memory Interface	Supplier Device Package	Memory Organization	Clock Frequency	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Technology	Voltage - Supply [Min]	Voltage - Supply [Max]	Memory Size	Memory Format
Infineon Technologies FM25W256-G	8-SOIC	3.9 mm	0.154 in	Non-Volatile	SPI	8-SOIC	32K x 8	20 MHz	85 °C	-40 °C	Surface Mount	FRAM (Ferroelectric RAM)	2.7 V	5.5 V	32 KB	FRAM
Infineon Technologies FM25W256-GTR	8-SOIC	3.9 mm	0.154 in	Non-Volatile	SPI	8-SOIC	32K x 8	20 MHz	85 °C	-40 °C	Surface Mount	FRAM (Ferroelectric RAM)	2.7 V	5.5 V	32 KB	FRAM

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 8.33
		10	$ 7.67
		25	$ 7.51
		97	$ 6.71
		291	$ 6.51
		582	$ 6.19
		1067	$ 5.98
Newark	Each	1	$ 8.17
		10	$ 7.46
		25	$ 7.17
		50	$ 6.96
		100	$ 6.50
		250	$ 6.34
		500	$ 6.21

Description

General part information

FM25W256 Series

The FM25W256-G is a 256-Kbit nonvolatile memory with advanced ferroelectric technology, providing reliable data retention for 151 years. Unlike serial flash and EEPROM, it performs write operations at bus speed, with no write delays, and offers substantial write endurance, supporting 1014read/write cycles. With 100 million times more write cycles than EEPROM, it's ideal for applications requiring frequent or rapid writes, from critical data collection to demanding industrial controls.

Documents

Technical documentation and resources