MJD117T4

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STMicroelectronics

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, -100 V, 20 W, -2 A, 200 ROHS COMPLIANT: YES

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Active

STMicroelectronics

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, -100 V, 20 W, -2 A, 200 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	MJD117T4

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	20 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	1000
Frequency - Transition	25 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	20 W
Supplier Device Package	DPAK
Transistor Type	PNP - Darlington
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

Low voltage PNP power Darlington transistor

Part	Frequency - Transition	Transistor Type	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
STMicroelectronics MJD117T4	25 MHz	PNP - Darlington	2 A	20 W	3 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	150 °C	20 µA	Surface Mount	100 V	DPAK	1000

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The devices are manufactured in planar technology with "base island" layout and monolithic Darlington configuration.

Technical documentation and resources