TIP112

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STMicroelectronics

BIPOLAR (BJT) SINGLE TRANSISTOR, DARLINGTON, NPN, 100 V, 2 W, 2 A, 1000 ROHS COMPLIANT: YES

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Active

STMicroelectronics

BIPOLAR (BJT) SINGLE TRANSISTOR, DARLINGTON, NPN, 100 V, 2 W, 2 A, 1000 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	TIP112

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max)	2 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	1000 hFE
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	2 W
Supplier Device Package	TO-220
Vce Saturation (Max) @ Ib, Ic [Max]	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

Part	Vce Saturation (Max) @ Ib, Ic [Max]	Package / Case	Operating Temperature	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Supplier Device Package	Current - Collector Cutoff (Max)	Voltage - Collector Emitter Breakdown (Max) [Max]
STMicroelectronics TIP112	2.5 V	TO-220-3	150 °C	2 W	2 A	1000 hFE	Through Hole	TO-220	2 mA	100 V

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General part information

Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 2 W Through Hole TO-220

Technical documentation and resources