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IRF3610STRLPBF - PG-TO263-3

IRF3610STRLPBF

Obsolete
Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 11.6 MOHM; WIDE SOA

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IRF3610STRLPBF - PG-TO263-3

IRF3610STRLPBF

Obsolete
Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 11.6 MOHM; WIDE SOA

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF3610STRLPBF
Current - Continuous Drain (Id) @ 25°C103 A
Drain to Source Voltage (Vdss)100 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs150 nC
Input Capacitance (Ciss) (Max) @ Vds5380 pF
Mounting TypeSurface Mount
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Rds On (Max) @ Id, Vgs11.6 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.11
10$ 2.71
100$ 1.91
Digi-Reel® 1$ 4.11
10$ 2.71
100$ 1.91
Tape & Reel (TR) 800$ 1.49
1600$ 1.45

Description

General part information

IRF3610 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Documents

Technical documentation and resources