IDFW80C65D1XKSA1

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Infineon Technologies

THE IDFW80C65D1 IS A 650 V SILICON POWER DIODE IN TO-247 ADVANCED ISOLATION PACKAGE

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Infineon Technologies

THE IDFW80C65D1 IS A 650 V SILICON POWER DIODE IN TO-247 ADVANCED ISOLATION PACKAGE

Technical Specifications

Parameters and characteristics for this part

Specification	IDFW80C65D1XKSA1

Current - Average Rectified (Io) (per Diode)	74 A
Current - Reverse Leakage @ Vr	40 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	73 ns
Speed	200 mA, 500 ns
Supplier Device Package	PG-TO247-3-AI
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Diode Configuration	Technology	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Package / Case	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Speed	Current - Average Rectified (Io) (per Diode)
Infineon Technologies IDFW80C65D1XKSA1	1 Pair Common Cathode	Standard	PG-TO247-3-AI	650 V	1.7 V	Through Hole	TO-247-3	-40 °C	175 ░C	73 ns	40 µA	200 mA 500 ns	74 A

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General part information

Rapid 1switching 650 V, 80 A emitter controlledsilicon power diodein a TO-247advanced isolationpackage for a best cost efficient solution.