
SBR20U40CT
ActiveRECTIFIER DIODE, 1 PHASE, 2 ELEMENT, 10A, 40V V(RRM), SILICON, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
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SBR20U40CT
ActiveRECTIFIER DIODE, 1 PHASE, 2 ELEMENT, 10A, 40V V(RRM), SILICON, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
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Technical Specifications
Parameters and characteristics for this part
| Specification | SBR20U40CT |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 10 A |
| Current - Reverse Leakage @ Vr | 500 µA |
| Diode Configuration | 1 Pair Common Cathode |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | TO-220-3 |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | TO-220-3 |
| Technology | Super Barrier |
| Voltage - DC Reverse (Vr) (Max) [Max] | 40 V |
| Voltage - Forward (Vf) (Max) @ If | 470 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 1.21 | |
| 50 | $ 0.98 | |||
| 100 | $ 0.80 | |||
| 500 | $ 0.72 | |||
Description
General part information
SBR20U100CTE Series
Super Barrier Rectifier (SBR®) is a proprietary and patented Diodes Incorporated technology that utilizes a Metal Oxide Semiconductor (MOS) manufacturing process to create a superior alternative to the Schottky diode. This Super Barrier Rectifier (SBR) diode has been designed to meet the stringent requirements of automotive applications combining low-forward voltage drop with low leakage current and avalanche capability.
Documents
Technical documentation and resources