BD537

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STMicroelectronics

TRANS NPN 80V 8A TO220

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STMicroelectronics

TRANS NPN 80V 8A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	BD537

Current - Collector (Ic) (Max) [Max]	8 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	15
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	50 W
Supplier Device Package	TO-220
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	800 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

TRANS NPN 80V 8A TO220

Part	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Transistor Type	Operating Temperature	Mounting Type	Package / Case	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]
STMicroelectronics BD537	TO-220	8 A	NPN	150 °C	Through Hole	TO-220-3	100 µA	800 mV	50 W	15	80 V

General part information

Bipolar (BJT) Transistor NPN 80 V 8 A 50 W Through Hole TO-220

Technical documentation and resources

No documents available