DXTP22040CFG-7

Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 2A I(C), 40V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 8 PIN,

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Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 2A I(C), 40V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 8 PIN,

Technical Specifications

Parameters and characteristics for this part

Specification	DXTP22040CFG-7

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	20 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	120 MHz
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max [Max]	1.07 W
Supplier Device Package	PowerDI3333-8 (SWP) Type UX
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

PNP, 40V, 2A, PowerDI3333-8

Part	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Mounting Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type
Diodes Inc DXTP22040CFG-7	20 nA	120 MHz	Surface Mount Wettable Flank	8-PowerVDFN	-55 °C	175 ░C	40 V	1.07 W	2 A	600 mV	PowerDI3333-8 (SWP) Type UX	200	PNP

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