
IXT-1-1N100S1-TR
ObsoleteIXYS
MOSFET N-CH 1000V 1.5A 8-SOIC
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IXT-1-1N100S1-TR
ObsoleteIXYS
MOSFET N-CH 1000V 1.5A 8-SOIC
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IXT-1-1N100S1-TR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.5 A |
| Drain to Source Voltage (Vdss) | 1000 V |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
IXT-1 Series
N-Channel 1000 V 1.5A (Tc)
Documents
Technical documentation and resources
No documents available