IDP23E60

Obsolete

Infineon Technologies

DIODE GP 600V 41A TO220-2-2

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Obsolete

Infineon Technologies

DIODE GP 600V 41A TO220-2-2

Technical Specifications

Parameters and characteristics for this part

Specification	IDP23E60

Current - Average Rectified (Io)	41 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	120 ns
Speed	200 mA, 500 ns
Supplier Device Package	PG-TO220-2-2
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2 V

Part	Current - Average Rectified (Io)	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Current - Reverse Leakage @ Vr	Package / Case	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Supplier Device Package
Infineon Technologies IDP23E60	41 A	Through Hole	2 V	175 ░C	-55 C	200 mA 500 ns	50 µA	TO-220-2	Standard	600 V	120 ns	PG-TO220-2-2

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 41A Through Hole PG-TO220-2-2

Technical documentation and resources