IRFB4019PBF
ActiveInfineon Technologies
IR MOSFET™ N-CHANNEL MOSFET ; TO-220 PACKAGE; 95 MOHM;
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IRFB4019PBF
ActiveInfineon Technologies
IR MOSFET™ N-CHANNEL MOSFET ; TO-220 PACKAGE; 95 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IRFB4019PBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 17 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [x] | 20 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 80 W |
| Rds On (Max) @ Id, Vgs | 95 mOhm |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.9 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 2.25 | |
| 10 | $ 1.45 | |||
| 100 | $ 0.98 | |||
| 500 | $ 0.79 | |||
| 1000 | $ 0.72 | |||
| 2000 | $ 0.67 | |||
| 5000 | $ 0.64 | |||
Description
General part information
IRFB4019 Series
The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Documents
Technical documentation and resources