AOTF160A60L

Active

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 24A TO220F

Search across all available documentation for this part.

Active

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 24A TO220F

Technical Specifications

Parameters and characteristics for this part

Specification	AOTF160A60L

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2340 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	34.7 W
Rds On (Max) @ Id, Vgs	160 mOhm
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.6 V

Part	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Technology
Alpha & Omega Semiconductor Inc. AOTF160A60L	160 mOhm	34.7 W	-55 °C	150 °C	600 V	2340 pF	10 V	N-Channel	46 nC	3.6 V	20 V	Through Hole	24 A	TO-220F	TO-220-3 Full Pack	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 24A (Tj) 34.7W (Tc) Through Hole TO-220F

Technical documentation and resources