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1011GN-30EL

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Microchip Technology

1011GN-30EL-POWER-TRANSISTOR

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1011GN-30EL

Active
Microchip Technology

1011GN-30EL-POWER-TRANSISTOR

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification1011GN-30EL
Current - Test40 mA
Frequency [Max]1.09 GHz
Frequency [Min]1.03 GHz
Gain18.5 dBi
Mounting TypeSurface Mount
Package / Case55-QQP
Power - Output35 W
Supplier Device Package55-QQP
TechnologyGaN
Voltage - Rated150 V
Voltage - Test50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
Microchip DirectN/A 1$ 485.96
5$ 418.20
10$ 366.81
25$ 327.09
50$ 299.05
100$ 275.69
250$ 259.34
500$ 249.99
1000$ 245.32
5000$ 242.98

1011GN-30EL-Power-Transistor Series

1011GN-30EL-Power-Transistor

PartVoltage - TestVoltage - RatedSupplier Device PackagePower - OutputCurrent - TestGainPackage / CaseTechnologyMounting TypeFrequency [Min]Frequency [Max]
Microchip Technology
1011GN-30EL
50 V
150 V
55-QQP
35 W
40 mA
18.5 dBi
55-QQP
GaN
Surface Mount
1.03 GHz
1.09 GHz

Description

General part information

1011GN-30EL-Power-Transistor Series

The 1011GN-30E/EL/EP is a 30 Watts, 50 Volts, 1030-1090 MHz, Earless Driver GaN Transistor. This 30 W device features 128μs, 10% signaling with 30W Pulsed Output Power, plus 32μS-2% Pulsing. Designed using Common Source, class AB devices, the product utilizes 50V Bias Voltage and offers a >60% efficiency across the frequency band. The transistor is available in an extremely compact size with 18.5 dB typical power gain and 0.3 dB typical gain flatness. Ideal for use in IFF, Mode-S, TCAS Avionics Secondary Radars. All gold metallization and eutectic die attach for highest reliability. 50Ω in/out lumped element, very small footprint, plug & play pallets available.

Documents

Technical documentation and resources