EMX2T2R

NRND

Rohm Semiconductor

TRANS GP BJT NPN 50V 0.15A 6-PIN EMT T/R

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EMX2T2R

NRND

Rohm Semiconductor

TRANS GP BJT NPN 50V 0.15A 6-PIN EMT T/R

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Description Specifications Series Pricing CAD Documents

Description

General part information

EMX2T2 Series

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.· Ultra-compact complex bipolar transistor· For pre-amplifier· Small Surface Mount Package· Pb Free/RoHS Compliant

Technical Specifications

Parameters and characteristics for this part

Specification	EMX2T2R

Current - Collector (Ic) (Max)	0.15 mA
Current - Collector Cutoff (Max)	100 nA
DC Current Gain (hFE) (Min)	120
Frequency - Transition	180 MHz
Mounting Type	Surface Mount
NPN Count	2
Operating Temperature	150 °C
Package / Case	SOT-563, SOT-666
Package Name	EMT6
Power - Max	150 mW
Transistor Configuration	Dual
Transistor Type	NPN
Vce Saturation (Max)	400 mV
Voltage - Collector Emitter Breakdown (Max)	50 V

EMX2T2 Series

Part	NPN Count	Transistor Type	Transistor Configuration	Current - Collector (Ic) (Max)	Mounting Type	Package / Case	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min)	Power - Max	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Operating Temperature	Package Name	Vce Saturation (Max)
Rohm Semiconductor EMX2T2R	2	NPN	Dual	0.15 mA	Surface Mount	SOT-563 SOT-666	100 nA	120	150 mW	50 V	180 MHz	150 °C	EMT6	400 mV

Pricing

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