TSM089N08LCR RLG

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Taiwan Semiconductor Corporation

TRANS MOSFET N-CH 80V 67A 8-PIN PDFN EP T/R

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Taiwan Semiconductor Corporation

TRANS MOSFET N-CH 80V 67A 8-PIN PDFN EP T/R

Technical Specifications

Parameters and characteristics for this part

Specification	TSM089N08LCR RLG

Current - Continuous Drain (Id) @ 25°C	67 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	90 nC
Input Capacitance (Ciss) (Max) @ Vds	6119 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	83 W
Rds On (Max) @ Id, Vgs	8.9 mOhm
Supplier Device Package	8-PDFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	FET Type
Taiwan Semiconductor Corporation TSM089N08LCR RLG	67 A	Surface Mount	MOSFET (Metal Oxide)	90 nC	8-PowerTDFN	80 V	2.5 V	-55 °C	150 °C	8.9 mOhm	8-PDFN (5x6)	83 W	6119 pF	4.5 V 10 V	20 V	N-Channel

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General part information

N-Channel 80 V 67A (Tc) 83W (Tc) Surface Mount 8-PDFN (5x6)

Technical documentation and resources