IPP90R340C3XKSA2

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Infineon Technologies

MOSFET N-CH 900V 15A TO220-3

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Infineon Technologies

MOSFET N-CH 900V 15A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP90R340C3XKSA2

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	94 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	208 W
Rds On (Max) @ Id, Vgs [Max]	340 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	FET Type	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package
Infineon Technologies IPP90R340C3XKSA2	20 V	900 V	15 A	3.5 V	208 W	2400 pF	TO-220-3	340 mOhm	Through Hole	-55 °C	150 °C	10 V	MOSFET (Metal Oxide)	N-Channel	94 nC	PG-TO220-3-1

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General part information

N-Channel 900 V 15A (Tc) 208W (Tc) Through Hole PG-TO220-3-1

Technical documentation and resources