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STF9NM60N

STF9NM60N

Active
STMicroelectronics

POWER MOSFET, N CHANNEL, 6.5 A, 600 V, 0.63 OHM, 10 V, 3 V ROHS COMPLIANT: YES

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STF9NM60N

STF9NM60N

Active
STMicroelectronics

POWER MOSFET, N CHANNEL, 6.5 A, 600 V, 0.63 OHM, 10 V, 3 V ROHS COMPLIANT: YES

Find alt

Description

General part information

STF9NM60N Series

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.

Technical Specifications

Parameters and characteristics for this part

SpecificationSTF9NM60N
Current - Continuous Drain (Id) (Tc)6.5 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)17.4 nC
Input Capacitance (Ciss) (Max)452 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3 Full Pack
Package NameTO-220FP
Power Dissipation (Max)25 W
Rds On (Max)745 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max)4 V

Pricing

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CAD

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