BUL416

Obsolete

STMicroelectronics

TRANS NPN 800V 6A TO220

Search across all available documentation for this part.

Obsolete

STMicroelectronics

TRANS NPN 800V 6A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	BUL416

Current - Collector Cutoff (Max) [Max]	250 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	12
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	110 W
Supplier Device Package	TO-220
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	800 V

Part	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Operating Temperature	Supplier Device Package
STMicroelectronics BUL416	Through Hole	12	3 V	TO-220-3	800 V	NPN	250 µA	110 W	150 °C	TO-220
STMicroelectronics BUL416T	Through Hole	18 hFE	1.5 V	TO-220-3	800 V	NPN	250 µA	110 W	150 °C	TO-220

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 800 V 6 A 110 W Through Hole TO-220

Technical documentation and resources