DMP65H11D0HSS-13
ActiveDiodes Inc
600V P-CHANNEL ENHANCEMENT MODE MOSFET
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DMP65H11D0HSS-13
ActiveDiodes Inc
600V P-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMP65H11D0HSS-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 270 mA |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 13 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 670 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power Dissipation (Max) | 1.9 W |
| Rds On (Max) @ Id, Vgs | 11 Ohm |
| Supplier Device Package | 8-SO |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 4000 | $ 0.48 | |
| 8000 | $ 0.46 | |||
| 12000 | $ 0.45 | |||
Description
General part information
DMP65H11D0HSS Series
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Documents
Technical documentation and resources