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DMP2035UVT-7 - Package Image for TSOT26

DMP2035UVT-7

Active
Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

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DMP2035UVT-7 - Package Image for TSOT26

DMP2035UVT-7

Active
Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMP2035UVT-7
Current - Continuous Drain (Id) @ 25°C6 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]2400 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)1.2 W
Rds On (Max) @ Id, Vgs35 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.48
10$ 0.37
100$ 0.22
500$ 0.21
1000$ 0.14
Digi-Reel® 1$ 0.48
10$ 0.37
100$ 0.22
500$ 0.21
1000$ 0.14
Tape & Reel (TR) 3000$ 0.12
6000$ 0.11
9000$ 0.11
15000$ 0.10

Description

General part information

DMP2035UVTQ Series

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.