IPU60R1K5CEAKMA2

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Infineon Technologies

TRANS MOSFET N-CH 600V 5A 3-PIN(3+TAB) TO-251 TUBE

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Infineon Technologies

TRANS MOSFET N-CH 600V 5A 3-PIN(3+TAB) TO-251 TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	IPU60R1K5CEAKMA2

Current - Continuous Drain (Id) @ 25°C	3.1 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	9.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	49 W
Rds On (Max) @ Id, Vgs	1.5 Ohm
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Vgs (Max)	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies IPU60R1K5CEAKMA2	600 V	Through Hole	PG-TO251-3	IPAK TO-251-3 Short Leads TO-251AA	10 V	1.5 Ohm	9.4 nC	49 W	20 V	MOSFET (Metal Oxide)	150 °C	-40 °C	3.5 V	3.1 A	N-Channel	200 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 3.1A (Tc) 49W (Tc) Through Hole PG-TO251-3

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