94-2304

Obsolete

Infineon Technologies

MOSFET N-CH 30V 116A TO220AB

Search across all available documentation for this part.

Obsolete

Infineon Technologies

MOSFET N-CH 30V 116A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	94-2304

Current - Continuous Drain (Id) @ 25°C	116 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	60 nC
Input Capacitance (Ciss) (Max) @ Vds	3290 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	180 W
Rds On (Max) @ Id, Vgs	7 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	1 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	FET Type	Supplier Device Package	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Technology	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies 94-2304	116 A	1 V	30 V	4.5 V 10 V	Through Hole	16 V	N-Channel	TO-220AB	180 W	7 mOhm	TO-220-3	3290 pF	60 nC	MOSFET (Metal Oxide)	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 116A (Tc) 180W (Tc) Through Hole TO-220AB

Technical documentation and resources