IXTY08N50D2
ActivePOWER MOSFET, N CHANNEL, 500 V, 800 MA, 4.6 OHM, TO-252, SURFACE MOUNT
IXTY08N50D2
ActivePOWER MOSFET, N CHANNEL, 500 V, 800 MA, 4.6 OHM, TO-252, SURFACE MOUNT
Description
General part information
IXTY08N50D2 Series
As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously "on" (emergency or burglar alarms, for instance).
Technical Specifications
Parameters and characteristics for this part
| Specification | IXTY08N50D2 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 800 mA |
| Drain to Source Voltage (Vdss) | 500 V |
| FET Type | Depletion Mode, N-Channel |
| Gate Charge (Max) | 12.7 nC |
| Input Capacitance (Ciss) (Max) | 312 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | TO-252AA |
| Power Dissipation (Max) | 60 W |
| Rds On (Max) | 4.6 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
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