Specification	MSCDC100A70D1PAG

Current - Average Rectified (Io) (per Diode)	100 A
Current - Reverse Leakage	400 µA
Diode Configuration	Series Connection
Diode Pair Count	1 pair
Mounting Type	Chassis Mount
Operating Temperature - Junction (Max)	175 °C
Operating Temperature - Junction (Min)	-40 °C
Package / Case	Module
Package Name	D1P
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Speed - Fast Recovery (Minimum)	500 mA
Speed - Recovery Current	500 mA, 500 mA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	700 V
Voltage - Forward (Vf) (Max)	1.8 V

MSCDC100A70D1PAG-Module Series

700V, 100A, D1P Phase Leg mSiC™ Diode Module

Part	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Mounting Type	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Package Name	Reverse Recovery Time (trr)	Technology	Package / Case	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io) (per Diode)	Current - Reverse Leakage	Diode Pair Count	Diode Configuration	Voltage - Forward (Vf) (Max)
Microchip Technology MSCDC100A70D1PAG	500 mA	No Recovery Time	500 mA 500 mA	Chassis Mount	175 °C	-40 °C	D1P	0 ns	SiC (Silicon Carbide) Schottky	Module	700 V	100 A	400 µA	1 pair	Series Connection	1.8 V

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