STD3NM60-1

Obsolete

STMicroelectronics

MOSFET N-CH 600V 3A IPAK

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Obsolete

STMicroelectronics

MOSFET N-CH 600V 3A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	STD3NM60-1

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds	324 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	42 W
Rds On (Max) @ Id, Vgs	1.5 Ohm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STD3NK60ZD	311 pF	600 V	30 V	MOSFET (Metal Oxide)	2.4 A	3.6 Ohm	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V	N-Channel	-55 °C	150 °C	45 W	10 V	DPAK	11.8 nC
STMicroelectronics STD3NM60-1	324 pF	600 V	30 V	MOSFET (Metal Oxide)	3 A	1.5 Ohm	Through Hole	IPAK TO-251-3 Short Leads TO-251AA	5 V	N-Channel	-65 °C	150 °C	42 W	10 V	IPAK	14 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 3A (Tc) 42W (Tc) Through Hole IPAK

Technical documentation and resources