HN4A56JU(TE85L,F)

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Toshiba Semiconductor and Storage

TRANS 2 PNP 50V 150MA 5TSSOP

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Toshiba Semiconductor and Storage

TRANS 2 PNP 50V 150MA 5TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	HN4A56JU(TE85L,F)

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	60 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-70-5, 5-TSSOP, SOT-353
Power - Max [Max]	200 mW
Supplier Device Package	USV
Transistor Type	2 PNP (Dual)
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Power - Max [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Transistor Type
Toshiba Semiconductor and Storage HN4A56JU(TE85L,F)	50 V	150 mA	150 °C	Surface Mount	120	USV	200 mW	5-TSSOP SC-70-5 SOT-353	100 nA	60 MHz	2 PNP (Dual)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 150mA 60MHz 200mW Surface Mount USV

Technical documentation and resources

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