IPW60R180C7XKSA1

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Infineon Technologies

MOSFET N-CH 600V 13A TO247-3

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Infineon Technologies

MOSFET N-CH 600V 13A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPW60R180C7XKSA1

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	1080 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	68 W
Rds On (Max) @ Id, Vgs	180 mOhm
Supplier Device Package	PG-TO247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Mounting Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Technology	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id [Max]
Infineon Technologies IPW60R180C7XKSA1	10 V	4 V	68 W	600 V	TO-247-3	1080 pF	N-Channel	Through Hole	180 mOhm	-55 °C	150 °C	20 V	MOSFET (Metal Oxide)	PG-TO247-3	24 nC	13 A
Infineon Technologies IPW60R180P7XKSA1	10 V			650 V	TO-247-3	1081 pF	N-Channel	Through Hole	180 mOhm	-55 °C	150 °C	20 V	MOSFET (Metal Oxide)	PG-TO247-3	25 nC	18 A	72 W	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 13A (Tc) 68W (Tc) Through Hole PG-TO247-3

Technical documentation and resources