Zenode.ai Logo
Beta
⌘K
Log InSign Up
STP8N120K5 - TO-220-3

STP8N120K5

Active
STMicroelectronics

N-CHANNEL 1200 V, 1.65 OHM TYP., 6 A MDMESH K5 POWER MOSFET IN A TO-220 PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheetProduct Change Notice EN+16
STP8N120K5 - TO-220-3

STP8N120K5

Active
STMicroelectronics

N-CHANNEL 1200 V, 1.65 OHM TYP., 6 A MDMESH K5 POWER MOSFET IN A TO-220 PACKAGE

Deep-Dive with AI

DocumentsDatasheetProduct Change Notice EN+16

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP8N120K5
Current - Continuous Drain (Id) @ 25°C6 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]13.7 nC
Input Capacitance (Ciss) (Max) @ Vds505 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)130 W
Rds On (Max) @ Id, Vgs2 Ohm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 6.16
50$ 4.92
100$ 4.40
500$ 3.88
1000$ 3.50
2000$ 3.28
NewarkEach 1$ 7.44
10$ 7.06
25$ 5.19
50$ 5.04
100$ 4.88
250$ 4.50
500$ 4.45

Description

General part information

STP8N120K5 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.