D3501N36TXPSA1

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Infineon Technologies

DIODE GEN PURP 4870A D12035K-1

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Unknown

Infineon Technologies

DIODE GEN PURP 4870A D12035K-1

Technical Specifications

Parameters and characteristics for this part

Specification	D3501N36TXPSA1

Current - Average Rectified (Io)	4870 A
Current - Reverse Leakage @ Vr	100 mA
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	160 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	DO-200AE
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	BG-D12035K-1
Technology	Standard

Part	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Technology	Current - Reverse Leakage @ Vr	Supplier Device Package	Speed	Speed	Mounting Type	Current - Average Rectified (Io)	Package / Case
Infineon Technologies D3501N36TXPSA1	-40 °C	160 °C	Standard	100 mA	BG-D12035K-1	Standard Recovery >500ns	200 mA	Chassis Mount	4870 A	DO-200AE

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 4870A Chassis Mount BG-D12035K-1

Technical documentation and resources