TC1550TG-G
ActiveN/P-CHANNEL ENHANCEMENT-MODE DUAL MOSFET
TC1550TG-G
ActiveN/P-CHANNEL ENHANCEMENT-MODE DUAL MOSFET
Description
General part information
TC1550 Series
TC1550 consists of a high voltage N-channel and P-channel MOSFET in an 8-Lead SOIC package. This is an enhancement-mode (normally-off) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Technical Specifications
Parameters and characteristics for this part
| Specification | TC1550TG-G |
|---|---|
| Configuration | N, P-Channel |
| Drain to Source Voltage (Vdss) | 500 V |
| Input Capacitance (Ciss) (Max) | 70 pF, 55 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package Length | 0.154 in |
| Package Name | 8-SOIC |
| Package Width | 3.9 mm |
| Rds On (Max) | 60 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 4 V |
Pricing
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