BSP296NH6433XTMA1

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Infineon Technologies

TRANS MOSFET N-CH 100V 1.2A AUTOMOTIVE AEC-Q101 4-PIN(3+TAB) SOT-223 T/R

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Infineon Technologies

TRANS MOSFET N-CH 100V 1.2A AUTOMOTIVE AEC-Q101 4-PIN(3+TAB) SOT-223 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	BSP296NH6433XTMA1

Current - Continuous Drain (Id) @ 25°C	1.2 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.7 nC
Input Capacitance (Ciss) (Max) @ Vds	152.7 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	1.8 W
Rds On (Max) @ Id, Vgs [Max]	600 mOhm
Supplier Device Package	PG-SOT223-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.8 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	FET Type	Vgs (Max)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies BSP296NH6327XTSA1	4.5 V 10 V	1.8 V	1.2 A	TO-261-4 TO-261AA	1.8 W	100 V	PG-SOT223-4	600 mOhm	N-Channel	20 V	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	6.7 nC	152.7 pF
Infineon Technologies BSP296NH6433XTMA1	4.5 V 10 V	1.8 V	1.2 A	TO-261-4 TO-261AA	1.8 W	100 V	PG-SOT223-4	600 mOhm	N-Channel	20 V	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	6.7 nC	152.7 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 1.2A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

Technical documentation and resources