Technical Specifications
Parameters and characteristics for this part
| Specification | FMMT413TD |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 50 hFE |
| Frequency - Transition | 150 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power - Max [Max] | 330 mW |
| Supplier Device Package | SOT-23-3 |
| Transistor Type | NPN - Avalanche Mode |
| Vce Saturation (Max) @ Ib, Ic | 150 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
FMMT413 Series
The FMMT413 is a NPN silicon planar bipolar transistor optimized for avalanche mode operation. Tight process control and low inductance packaging combine to produce high current pulses with fast edges, making thesebipolar transistorsideal for laser diode driving.
Documents
Technical documentation and resources