SCS310AMC7G
ActiveRohm Semiconductor
650V, 10A, THD, SILICON-CARBIDE (SIC) SBD
SCS310AMC7G
ActiveRohm Semiconductor
650V, 10A, THD, SILICON-CARBIDE (SIC) SBD
Description
General part information
SCS310AM Series
Shorter recovery time, enabling high-speed switching.
Technical Specifications
Parameters and characteristics for this part
| Specification | SCS310AMC7G |
|---|---|
| Capacitance | 500 pF |
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage | 50 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | 175 °C |
| Package / Case | TO-220-2 Full Pack |
| Package Name | TO-220FM |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.5 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
SCS310AMC7G | Datasheet
θ<sub>JA</sub> and Ψ<sub>JT</sub>
How to Use LTspice® Models: Tips for Improving Convergence
About Export Administration Regulations (EAR)
Anti-Whisker formation
How to Use LTspice® Models
Notes for Calculating Power Consumption:Static Operation
Method for Monitoring Switching Waveform
Notes for Temperature Measurement Using Forward Voltage of PN Junction
PCB Layout Thermal Design Guide
Calculation of Power Dissipation in Switching Circuit
Impedance Characteristics of Bypass Capacitor
How to measure the oscillation occurs between parallel-connected devices
Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs
About Flammability of Materials
What is a Thermal Model? (SiC Power Device)
Importance of Probe Calibration When Measuring Power: Deskew
Part Explanation
Precautions for Thermal Resistance of Insulation Sheet
How to Use the Thermal Resistance and Thermal Characteristics Parameters
Explanation for Marking
Judgment Criteria of Thermal Evaluation
Compliance of the ELV directive
Application Note for SiC Power Devices and Modules
Precautions When Measuring the Rear of the Package with a Thermocouple
Basics of Thermal Resistance and Heat Dissipation
Diode Types and Applications
Notes for Temperature Measurement Using Thermocouples
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
Measurement Method and Usage of Thermal Resistance RthJC
What Is Thermal Design
How to Use Thermal Models
θ<sub>JC</sub> and Ψ<sub>JT</sub>
Two-Resistor Model for Thermal Simulation
Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules
How to Suppress the Parallel Drive Oscillation in SiC Modules
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup
4 Steps for Successful Thermal Designing of Power Devices
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
Oscillation countermeasures for MOSFETs in parallel
Condition of Soldering / Land Pattern Reference
How to Create Symbols for PSpice Models