IPW60R160C6FKSA1

NRND

Infineon Technologies

COOLMOS™ C6 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 160 MOHM;

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IPW60R160C6FKSA1

NRND

Infineon Technologies

COOLMOS™ C6 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 160 MOHM;

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPW60R160C6FKSA1

Current - Continuous Drain (Id) @ 25°C	23.8 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	75 nC
Input Capacitance (Ciss) (Max) @ Vds	1660 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	176 W
Rds On (Max) @ Id, Vgs	160 mOhm
Supplier Device Package	PG-TO247-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPW60R160 Series

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	FET Type
Infineon Technologies IPW60R160C6FKSA1	20 V	600 V	PG-TO247-3-1	Through Hole	23.8 A	176 W	75 nC	10 V	MOSFET (Metal Oxide)	3.5 V	160 mOhm	-55 °C	150 °C	TO-247-3	1660 pF	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 4.79
		30	$ 3.80
		120	$ 3.26
		510	$ 2.89
		1020	$ 2.48
		2010	$ 2.33
Newark	Each	1	$ 4.54
		10	$ 3.40
		25	$ 3.03
		50	$ 2.84
		100	$ 2.64
		480	$ 2.42
		720	$ 2.29

Description

General part information

IPW60R160 Series

The IPW60R160C6 is a 600V CoolMOS™ C6 N-channel Power MOSFET features easy control of switching behaviour. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ C6 combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered device provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.

Documents

Technical documentation and resources

No documents available