IPP030N10N3GXKSA1

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Infineon Technologies

MOSFET TRANSISTOR, N CHANNEL, 100 A, 100 V, 0.0026 OHM, 10 V, 2.7 V ROHS COMPLIANT: YES

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IPP030N10N3GXKSA1

Active

Infineon Technologies

MOSFET TRANSISTOR, N CHANNEL, 100 A, 100 V, 0.0026 OHM, 10 V, 2.7 V ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsTechnical Data Sheet EN Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPP030N10N3GXKSA1

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	206 nC
Input Capacitance (Ciss) (Max) @ Vds	14800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	3 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPP030 Series

Part	Vgs (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Mounting Type
Infineon Technologies IPP030N10N3GXKSA1	20 V	TO-220-3	3 mOhm	300 W	206 nC	100 V	14800 pF	-55 °C	175 ░C	PG-TO220-3	3.5 V	6 V 10 V	N-Channel	100 A	MOSFET (Metal Oxide)	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 5.62
		10	$ 3.76
		100	$ 2.70
		500	$ 2.25
		1000	$ 2.21
Newark	Each	1	$ 5.40
		10	$ 4.76
		25	$ 3.06
		50	$ 2.93
		100	$ 2.80
		250	$ 2.56
		500	$ 2.32

Description

General part information

IPP030 Series

Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on)and FOM (figure of merit).

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet