IPF016N10NF2SATMA1

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Infineon Technologies

MOSFET, N-CH, 100V, 274A, TO-263 ROHS COMPLIANT: YES

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Infineon Technologies

MOSFET, N-CH, 100V, 274A, TO-263 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	IPF016N10NF2SATMA1

Current - Continuous Drain (Id) @ 25°C	274 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	241 nC
Input Capacitance (Ciss) (Max) @ Vds	11000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs [Max]	1.6 mOhm
Supplier Device Package	PG-TO263-7-14
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.8 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Technology	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	FET Type	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies IPF016N10NF2SATMA1	241 nC	6 V 10 V	20 V	300 W	11000 pF	Surface Mount	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	1.6 mOhm	MOSFET (Metal Oxide)	100 V	PG-TO263-7-14	274 A	3.8 V	N-Channel	-55 °C	175 ░C

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General part information

N-Channel 100 V 274A (Tc) 300W (Tc) Surface Mount PG-TO263-7-14

Technical documentation and resources