FZT795ATA

Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 0.5A I(C), 140V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 4 PIN

Search across all available documentation for this part.

Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 0.5A I(C), 140V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 4 PIN

Technical Specifications

Parameters and characteristics for this part

Specification	FZT795ATA

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	300 hFE
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	2 W
Supplier Device Package	SOT-223-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max)	140 V

PNP, 140V, 0.5A, SOT223

Part	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Operating Temperature [Min]	Operating Temperature [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Current - Collector Cutoff (Max) [Max]	Mounting Type	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type
Diodes Inc FZT795ATA	500 mA	100 MHz	-55 °C	150 °C	300 hFE	TO-261-4 TO-261AA	100 nA	Surface Mount	SOT-223-3	140 V	2 W	250 mV	PNP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP, 140V, 0.5A, SOT223

Technical documentation and resources