1SR139-600T-31

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Rohm Semiconductor

DIODE GEN PURP 600V 1A MSR

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Rohm Semiconductor

DIODE GEN PURP 600V 1A MSR

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General part information

Diode 600 V 1A Through Hole MSR

Technical documentation and resources

Parameters and characteristics commom to parts in this series

Specification	1SR139-600T-31	1SR139 Series

Current - Average Rectified (Io)	1 A	1 A
Current - Reverse Leakage @ Vr	10 µA	10 µA
Mounting Type	Through Hole	Through Hole
Operating Temperature - Junction	150 °C	150 °C
Package / Case	DO-41 Mini, Axial	DO-41 Mini, Axial
Speed	Standard Recovery >500ns	Standard Recovery >500ns
Speed	200 mA	200 - 500 mA
Supplier Device Package	MSR	MSR
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V	400 - 600 V
Voltage - Forward (Vf) (Max) @ If	1.1 V	1.1 V

DIODE GEN PURP 600V 1A MSR

Part	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Supplier Device Package	Technology	Speed	Speed	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction	Package / Case
Rohm Semiconductor 1SR139-600T-32	1 A	10 µA	MSR	Standard	Standard Recovery >500ns	200 mA	Through Hole	1.1 V	600 V	150 °C	DO-41 Mini, Axial
Rohm Semiconductor 1SR139-400T-32	1 A	10 µA	MSR	Standard	Standard Recovery >500ns	200 mA	Through Hole	1.1 V	400 V	150 °C	DO-41 Mini, Axial
Rohm Semiconductor 1SR139-400T-31	1 A	10 µA	MSR	Standard		200 mA, 500 ns	Through Hole	1.1 V	400 V	150 °C	DO-41 Mini, Axial
Rohm Semiconductor 1SR139-600T-31	1 A	10 µA	MSR	Standard	Standard Recovery >500ns	200 mA	Through Hole	1.1 V	600 V	150 °C	DO-41 Mini, Axial