FZT1151ATA

Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 3A I(C), 40V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 4 PIN, SOT-223, 4 PIN

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Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 3A I(C), 40V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 4 PIN, SOT-223, 4 PIN

Technical Specifications

Parameters and characteristics for this part

Specification	FZT1151ATA

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	250
Frequency - Transition	145 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	2.5 W
Supplier Device Package	SOT-223-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

PNP, 40V, 3A, SOT223

Part	Power - Max [Max]	Supplier Device Package	Package / Case	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Frequency - Transition
Diodes Inc FZT1151ATA	2.5 W	SOT-223-3	TO-261-4 TO-261AA	3 A	250	-55 °C	150 °C	300 mV	Surface Mount	40 V	PNP	100 nA	145 MHz
Diodes Inc FZT1151ATC	2.5 W	SOT-223-3	TO-261-4 TO-261AA	3 A	250	-55 °C	150 °C	300 mV	Surface Mount	40 V	PNP	100 nA	145 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP, 40V, 3A, SOT223

Technical documentation and resources