Zenode.ai Logo
Beta
K
UG2JAHR3G - PE1DAH

UG2JAHR3G

Unknown
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 2A DO214AC

Deep-Dive with AI

Search across all available documentation for this part.

UG2JAHR3G - PE1DAH

UG2JAHR3G

Unknown
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 2A DO214AC

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationUG2JAHR3G
Capacitance @ Vr, F20 pF
Current - Average Rectified (Io)2 A
Current - Reverse Leakage @ Vr2 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseDO-214AC, SMA
Reverse Recovery Time (trr)55 ns
Speed200 mA, 500 ns
Supplier Device PackageDO-214AC (SMA)
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

UG2J Series

Diode 600 V 2A Surface Mount DO-214AC (SMA)

Documents

Technical documentation and resources

No documents available