IPN50R800CEATMA1
ObsoleteCOOLMOS™ CE N-CHANNEL SUPERJUNCTION MOSFET 500 V ; SOT-223 PACKAGE; 800 MOHM; PRICE/PERFORMANCE
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IPN50R800CEATMA1
ObsoleteCOOLMOS™ CE N-CHANNEL SUPERJUNCTION MOSFET 500 V ; SOT-223 PACKAGE; 800 MOHM; PRICE/PERFORMANCE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPN50R800CEATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 7.6 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 13 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 12.4 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 280 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power Dissipation (Max) | 5 W |
| Rds On (Max) @ Id, Vgs | 800 mOhm |
| Supplier Device Package | PG-SOT223 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.03 | |
| 10 | $ 0.64 | |||
| 100 | $ 0.42 | |||
| 500 | $ 0.32 | |||
| 1000 | $ 0.29 | |||
| Tape & Reel (TR) | 3000 | $ 0.25 | ||
| 6000 | $ 0.23 | |||
| 9000 | $ 0.22 | |||
| 15000 | $ 0.21 | |||
| 21000 | $ 0.21 | |||
Description
General part information
IPN50R800 Series
Infineon is growing the portfolio ofCoolMOS™ CEwith theSOT-223 packageas a cost effective alternative to DPAK that also enables footprint reduction in some designs. The package can be placed on a typical DPAK footprint and comes with only a small compromise in thermal behavior. The SOT-223 from Infineon targets LED lighting and mobile charger applications.
Documents
Technical documentation and resources