IXFH6N100

IXYS

MOSFET N-CH 1000V 6A TO247AD

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IXYS

MOSFET N-CH 1000V 6A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	IXFH6N100

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	130 nC
Input Capacitance (Ciss) (Max) @ Vds	2600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	180 W
Rds On (Max) @ Id, Vgs	2 Ohm
Supplier Device Package	TO-247AD (IXFH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Technology	Power Dissipation (Max) [Max]
IXYS IXFH6N100	-55 °C	150 °C	130 nC	1000 V	20 V	10 V	4.5 V	2600 pF	Through Hole	6 A	N-Channel	TO-247-3	TO-247AD (IXFH)	180 W	2 Ohm	MOSFET (Metal Oxide)
IXYS IXFH6N100Q	-55 °C	150 °C	48 nC	1000 V	20 V	10 V	4.5 V	2200 pF	Through Hole	6 A	N-Channel	TO-247-3	TO-247AD (IXFH)	180 W	1.9 Ohm	MOSFET (Metal Oxide)
IXYS IXFH6N90	-55 °C	150 °C	130 nC	900 V	20 V	10 V	4.5 V	2600 pF	Through Hole	6 A	N-Channel	TO-247-3	TO-247AD (IXFH)		2 Ohm	MOSFET (Metal Oxide)	300 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	30	$ 12.88

General part information

N-Channel 1000 V 6A (Tc) 180W (Tc) Through Hole TO-247AD (IXFH)

Technical documentation and resources